倪园园,涂彧,周菊英,等.金属氧化物半导体场效应晶体管测量面罩对表面剂量的影响[J].中华放射医学与防护杂志,2008,28(3):289-290.NI Yuan-yuan,TU Yu,ZHOU Ju-ying,et al.An investigation about the effect of masks on surface dose by using MOSFET detector[J].Chin J Radiol Med Prot,2008,28(3):289-290 |
金属氧化物半导体场效应晶体管测量面罩对表面剂量的影响 |
An investigation about the effect of masks on surface dose by using MOSFET detector |
投稿时间:2007-07-03 |
DOI: |
中文关键词: MOSFET 面罩 表面剂量 |
英文关键词:MOSFET Mask Surface dose |
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中文摘要: |
目的 使用金属氧化物半导体场效应晶体管(metal oxide semiconductor field effect transistor,MOSFET)探测器测量面罩对表面剂量的影响。方法 选用6MV和15MV X射线进行照射,分为有面罩组和无面罩组,用MOSFET分别测量,每组测5次,共测量5种不同密度的面罩。结果 使用面罩后表面剂量明显增加;不同面罩对表面剂量的影响程度不同。结论 使用面罩后射线的剂量建成区出现变化,表面剂量明显提高。临床治疗中需要适当关注皮肤表面的放射反应。 |
英文摘要: |
Objective To measure the effect of masks on surface dose for the use of MOSFET detector. Methods The experimental objects were irradiated with 6MV and 15MV X-rays and the objects were divided into masked group and non-masked group before exposure. The dose measurements of each group was measured for 5 times and 5 types of masks of different density were measured by using MOSFET detector. Results The surface dose increases significantly after applying the mask; and different types of masks have identical effect on it. Conclusion The dose build-up regions have changed and surface dose increases considerably after the application of masks. Hence, proper attention should be paid to the radiation effects of the skin surface in clinical therapy. |
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